The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1988
Filed:
Jul. 27, 1987
Applicant:
Inventors:
Stephen J Valeri, Warren, MI (US);
Bernard A MacIver, Lathrup Village, MI (US);
Kailash C Jain, Sterling Heights, MI (US);
Assignee:
General Motors Corporation, Detroit, MI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357 234 ; 357 22 ;
Abstract
A vertical j-MOSFET useful as a power transistor includes a two-dimensional array of square cells in which a small fraction of the cells are replaced by a double-junction sink useful for collecting the minority carriers in the channel regions that normally will accumulate at each interface of the gate electrode and channel region.
Quick Actions:
Valeri, Stephen. (1988). Vertical depletion-mode j-mosfet (U.S. Patent No. 4746960). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4746960
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile