The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1988
Filed:
Aug. 29, 1986
Peter J Shak, Hoffman Estates, IL (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A pressure transducer (10; 10') having a silicon diaphragm (14; 14') and an insulating glass base (11; 11'). Surfaces (16, 12; 16', 12') of the diaphragm and glass base are anodically bonded together to form a hermetic seal for an internal reference cavity (24; 24') therein and also to provide hermetic protection for critical areas (70, 77; 70', 80, 81) on the silicon diaphragm. A plurality of semiconductor components are synthesized in an area (70; 70') in the silicon diaphragm. A plurality of conductors (71-73; 71'-73') are embedded (sealed) in the glass base so as to provide external electrical access to the semiconductor components without disrupting the hermetic seal provided between the silicon diaphragm and the glass base. This occurs by virtue of embedded pins (71-73; 71'-73') in the glass base extending between top and bottom surfaces (12, 13; 12', 13') of the glass base with flat ends of these pins, which ends are coplanar with the base surfaces to be anodically bonded, forming a silicon gold eutectic with bonding pads (77; 77') on the silicon diaphragm during anodic bonding. The bonding pads are within outer peripheral areas (18; 18') of a bottom surface (16; 16') of the silicon diaphragm that are hermetically bonded to outer peripheral areas (22; 22') of a top surface (12; 12') of the glass base during the anodic bonding process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile