The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1988
Filed:
Oct. 21, 1986
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
This invention provides a high potential hold circuit comprising: a high potential node; a high potential hold enhancement mode MOS transistor for holding a potential of the high potential node by setting the high potential hold transistor in an non-conducting state after the node is charged, having one end connected to a first input signal and the other end connected to the high potential node; a discharge enhancement mode MOS transistor for discharging the potential of the high potential node, having one end connected to the ground potential, the other end connected to the high potential node and a gate connected to a second input signal; a field relaxation enhancement mode MOS transistor located between the high potential node and the high potential hold transistor; and charge-discharge means for charging and discharging a potential of a gate of the field relaxation transistor.