The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1988
Filed:
May. 08, 1987
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A heterojunction bipolar transistor having excellent high-frequency characteristics is manufactured by forming a semi-insulating semiconductor layer on a collector (or emitter) layer, removing a part of the semi-insulating semiconductor layer to form a cut portion so that the collector layer is exposed at the cut portion, growing a base layer on the semi-insulating semiconductor layer, on a slant wall of the cut portion and on the exposed part of the collector layer, and growing an emitter (or collector) layer on the base layer. A base layer may be preliminarily formed on the semi-insulating semiconductor layer before forming the cut portion. Energy band gap of the emitter is greater than that of the base.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile