The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1988
Filed:
Feb. 17, 1987
Sigeru Morita, Hachioji, JP;
Masakazu Kakumu, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor manufacturing method which comprises the steps of forming a polycrystalline silicon layer on a semiconductor substrate; depositing a silicon oxide layer on the polycrystalline silicon layer; mounting an acidproof layer on the silicon oxide layer; selectively eliminating the acidproof layer deposited on a semiconductor element-isolating region by the photoetching process; selectively eliminating the silicon oxide layer with the retained acidproof layer used as a mask; ion implanting a channel stopper impurity in the semiconductor substrate through the masks formed of a photoresist coated on the acidproof layer the acidproof layer, and silicon oxide layer; eliminating the photoresist; selectively depositing a silicon layer on the exposed polycrystalline silicon; carrying out thermal oxidation with the acidproof layer used as a mask; eliminating the acidproof layer; filling an oxide in the cavities of the side walls of the semiconductor element-isolating insulation layer; and exposing by etching that portion of the semiconductor substrate which will constitute a semiconductor element region, thereby forming a thick semiconductor element-isolating layer with high precision in a narrow semiconductor element-isolating region.