The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1988
Filed:
Jan. 29, 1986
Applicant:
Inventor:
Richard H Lane, San Jose, CA (US);
Assignee:
Signetics Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 28 ; 156643 ; 156649 ; 156653 ; 156657 ; 357 34 ; 357 54 ; 357 56 ; 357 91 ; 437 33 ; 437 38 ; 437 69 ; 437193 ; 437200 ; 437228 ; 437909 ; 437931 ; 437956 ; 437984 ;
Abstract
A method for fabricating a semiconductor device in which the base resistance is minimized to increase the speed of operation of the device. This is accomplished because the device made by the method makes it possible to form the base and emitter contacts next to each other laterally but spaced vertically.
Lane, Richard. (1988). Method of making bipolar semiconductor device with wall spacer (U.S. Patent No. 4746623). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4746623
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile