The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1988
Filed:
Jun. 18, 1987
Hormoz M Motamedi, San Jose, CA (US);
John G Richards, San Jose, CA (US);
Hector H Flores, San Jose, CA (US);
FEI Microwave, Inc., Sunnyvale, CA (US);
Abstract
A gallium arsenide tunnel diode is fabricated using planar techniques from a wafer of gallium arsenide that has been heavily doped to form a P region. Tin is plated onto an exposed section of a surface of the wafer and then melted to cause individual tin atoms to diffuse only a few atomic layers into the wafer, creating a heavily doped N region. Metal contact layers are then formed over the tin and on the opposite surface of the wafer. An oxidation inhibitor is used during the plating and a scavenging agent is used during the melting to insure intimate contact between the tin and the wafer.