The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 1988

Filed:

Apr. 18, 1986
Applicant:
Inventors:

Jun Tajika, Hiratsuka, JP;

Seijiro Sano, Chigasaki, JP;

Tsuneo Miyake, Isehara, JP;

Osamu Kuboi, Chigasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
136258 ; 136256 ; 357 30 ;
Abstract

An amorphous silicon solar cell comprising a glass substrate, a transparent conductive film formed on the glass substrate on one side thereof and having micro-columns or fine crystals irregularly formed on the other side, a plurality of amorphous silicon layers superposed on said other side of the conductive film, and a metal electrode formed on the superposed silicon layer. At the interface between the transparent conductive film and the amorphous silicon layer is formed an intermediate layer in which both materials of the conductive film and the silicon layer are mixed. The intermediate layer has a refractive index between the conductive film and the silicon layer. The glass substrate may be substituted with a metal substrate, in which case the plurality of silicon layers are formed directly on the metal substrate, on which the transparent conductive film having an irregular surface on the side opposite to the side where the silicon layers are formed and a metal electrode are formed in this order.


Find Patent Forward Citations

Loading…