The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1988
Filed:
Oct. 17, 1985
Isao Fukushi, Tokyo, JP;
Tomoharu Awaya, Yokohama, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A bipolar-transistor type RAM device, particularly an ECL type RAM device, includes a memory cell array, an address receiving circuit, a normal memory cell selecting circuit, and a redundancy configuration. The redundancy configuration includes a redundancy memory cell array, a defective memory address storing circuit, an address comparing circuit, and a redundancy memory cell selecting circuit. The address comparing circuit directly receives the address signal and the defective memory address signal. The normal memory cell selecting circuit is energized when the address signal does not equal the defective memory address signal. Otherwise, the redundancy memory cell selecting circuit is energized.