The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1988
Filed:
Jun. 12, 1986
Siang P Kwok, Colorado Springs, CO (US);
Ford Microelectronics, Inc., Colorado Springs, CO (US);
Abstract
A process for producing a semiconductor device includes depositing a layer of insulator material onto a supporting substrate of the type having a surface which includes a channel region below the surface thereof containing a carrier concentration of a desired conductivity type, removing selected portions of the insulator material to form a substitutional gate on the substrate surface, forming side walls bounding substitutional gate to define an effective masking area in cooperation with the substitutional gate, ion implanting a dopant into the unmasked region of the substrate, removing the side walls, annealing the resultant device, removing the substitutional gate, depositing gate metal and first and second ohmic contacts in correct positional relation to one another on the substrate, and depositing metallic interconnects in electrical communication with the ohmic contacts to produce a semiconductor device. This technique is especially useful in the production of Group III-V compound semiconductors, particularly gallium arsenide semiconductors.