The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1988
Filed:
Feb. 20, 1986
Peter D Scovell, Chelmsford, GB;
Peter F Blomley, Bishops Stortford, GB;
Roger L Baker, Chelmsford, GB;
Gary J Tomkins, Maidstone, GB;
STC, plc, , GB;
Abstract
A fully self-aligned polycrystalline silicon emitter bipolar transistor. Self-alignment of the p.sup.+ base contact (12) is achieved by using oxidized sidewalls (8) (sidewall spacers) of the emitter mesa (7) as part of the p.sup.+ base contact implantation mask. Collector contact (13) alignment can be achieved using oxidized sidewalls (17) of polycrystalline silicon alignment mesas (14) defined in the same polysilicon as the emitter mesa (7) but deposited on oxide (2) rather than the implanted base region (5).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile