The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 1988
Filed:
Aug. 06, 1986
Nobuo Toyokura, Kawasaki, JP;
Masao Taguchi, Sagamihara, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device such as a MIS type capacitor which including a semiconductor substrate of one conductive sign (p-type silicon substrate), a region (n-type) of conductive sign opposite to that of the substrate formed in the substrate, an electrode making up a capacitor formed on the substrate apart from the region of opposite conductive sign and a transfer gate formed between the capacitor and the region of opposite conductive sign. The device is fabricated according to the invention such that the insulating film is formed under the electrode and has substantially the same planar form as the electrode, the insulating film contains impurities of a conductive sign opposite to that of the substrate and the region of opposite conductive sign is formed where the insulating film is in contact with the substrate. The region of opposite conductive sign is formed accurately in a self-alignment fashion. Such insulating film is made of an oxide or a nitride of at least one metal selected from the group consisting of Ta, Ti, Hf, Nb, Zr and Al.