The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 1988
Filed:
Aug. 11, 1987
Applicant:
Inventors:
Ranjana Pandya, Cold Spring, NY (US);
Andre M Martinez, Wappingers Falls, NY (US);
Assignee:
North American Philips Corp., New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 84 ; 148D / ; 156D / ; 437 17 ; 437 19 ;
Abstract
A structure comprising thin defect-free monocrystalline layer of a silicon of an insulating layer is produced from a structure comprising a thin recrystallizable layer of silicon on an insulating layer by use of a low softening point insulating layer, scanning the structure relative to a zone heater the beams of which are focused on the recrystallizable silicon layer so as to form a melt zone having a convex solid-liquid interface in the silicon layer while forming a liquid area under the melt zone in the insulating layer.