The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 1988
Filed:
Jul. 24, 1987
Applicant:
Inventor:
Kanetake Takasaki, Tokyo, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 38 ; 427314 ;
Abstract
A process for the preparation of a semiconductor device by the plasma chemical vapor deposition of amorphous silicon on a substrate, which comprises generating plasma in a deposition furnace by using a high frequency wave of less than 1 MHz to deposit an amorphous silicon film, and generating oxygen plasma in the same deposition furnace and irradiating the amorphous silicon film with the oxygen plasma.
Takasaki, Kanetake. (1988). Process for preparation of semiconductor device (U.S. Patent No. 4741919). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4741919
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