The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 1988

Filed:

Jul. 17, 1986
Applicant:
Inventors:

Kensaku Yano, Yokohama, JP;

Takao Kon, Tokyo, JP;

Masayuki Kakegawa, Chigasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 24 ; 357 31 ; 357 32 ; 250578 ;
Abstract

In a solid-state image sensor, a semiconductor structure having storage sections and a transfer section is formed in a substrate and an insulating film is formed on the substrate. Charge transfer electrodes are buried in the insulating film above the transfer section and pixel electrodes are formed on the insulating film and are electrically connected to the storage sections through electrodes, respectively. A photoconductive film for converting to incident light rays to electrical charges is formed on the insulating film, a barrier layer is formed on the film and a transparent electrode is formed on the barrier layer. Electrodes and semiconductor layers are buried in the insulating film such that each of the semiconductor layers is partly contacted to the photoconductive film, thereby a diode structure is formed by the photoconductive film, the semiconductor layer and the pixel electrodes.


Find Patent Forward Citations

Loading…