The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 1988

Filed:

Nov. 14, 1986
Applicant:
Inventor:

Christina P Phan, Santa Clara, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ; H03F / ;
U.S. Cl.
CPC ...
330253 ; 3072 / ; 330261 ; 330298 ;
Abstract

An additional device is provided in parallel with one of the input devices of a differential pair. A fixed bias voltage, which is slightly less than the midpoint of the swing range of the input voltage to the differential pair, is applied to the gate of the added device. During the positive swing of the input, the added device remains off and does not effect performance. When the input voltage becomes lower than the fixed bias voltage, the added device turns on and conducts all current needed by the current source, leaving the differential input devices off, and eliminating impact ionization in the differential pair.


Find Patent Forward Citations

Phan, Christina. (1988). Circuit technique for eliminating impact ionization in a differential (U.S. Patent No. 4740760). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4740760

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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