The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 1988
Filed:
Jan. 15, 1987
Applicant:
Inventors:
Yoshifumi Masaki, Nara, JP;
Setsufumi Kamuro, Yamatokoriyama, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H03K / ; G11C / ;
U.S. Cl.
CPC ...
307279 ; 307450 ; 307451 ; 357 42 ; 357 91 ; 365 95 ; 365156 ;
Abstract
In a CMOS FET IC element including at least one pair of transistors with connected drains, one an N-channel MOSFET and one a P-channel MOSFET, the N-channel MOSFET having a first threshold voltage controlled by the implantation of an ion, and the P-channel MOSFET having a second threshold voltage control are implanted with the same type of ion, so that one of the pair of transistors, either the N-channel MOSFET or the P-channel MOSFET is of a type that is normally ON, and the other MOSFET is of a type that is normally OFF with any gate voltage between the two voltages supplied to their sources.