The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 1988
Filed:
Nov. 12, 1986
Applicant:
Inventor:
Tadashi Hirao, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 33 ; 437153 ; 437162 ; 357 34 ;
Abstract
A method of manufacturing a semiconductor device in which in order to lead out directly a base electrode (9) from an active base layer (62) through a double layer comprising a first silicon film (601) and a metal silicide film (502), a part of an emitter electrode is formed of a second silicon film (602) and a hole for a contact is provided for forming the metal silicide film (502) for the active base layer (62) utilizing the second silicon film (602) as a mask.