The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 1988
Filed:
Apr. 17, 1985
Applicant:
Inventors:
Yoshio Imai, Suginami-ku, Tokyo, JP;
Atsuhito Sawabe, Yokohama, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156613 ; 156614 ; 156D / ; 156D / ; 427 42 ;
Abstract
A process for preparing a diamond thin film by an electron assisted chemical vapor deposition (EACVD) is disclosed, in which diamond crystal nuclei are caused to form and grow to a thin film on a heated plate substrate under electron bombardments in an atmosphere of a mixed gas of hydrogen and a hydrocarbon in a reduced pressure. A Boron doped p-type diamond semiconductor is prepared by an addition of a trace amount of diborane in the mixed gas of the hydrogen and the hydrocarbon in said EACVD.
Quick Actions:
Imai, Yoshio. (1988). Process for preparing thin film and p-type diamond semiconductor (U.S. Patent No. 4740263). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4740263
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile