The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1988
Filed:
May. 23, 1983
Victor A Temple, Jonesville, NY (US);
Armand P Ferro, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
A thyristor is provided having high gate sensitivity in combination with high dv/dt ratings. An amplifying gate structure is utilized having a pilot thyristor region including a first portion characterized by a first extent and at least one projection of said first portion extending therefrom and having a lateral extent greater than the extent of said first portion; and means substantially isolating said pilot thyristor region from the remainder of the device which means surround said first portion and the sides of said projection.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile