The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1988
Filed:
Oct. 01, 1986
Applicant:
Inventors:
Yukio Kurosawa, Hitachi, JP;
Yoshimi Hakamata, Hitachi, JP;
Yasunori Ohno, Hitachi, JP;
Kunio Hirasawa, Hitachi, JP;
Tadashi Sato, Mito, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05H / ;
U.S. Cl.
CPC ...
2504 / ; 250427 ; 31511181 ;
Abstract
An ion beam for use in fabrication and processing of semiconductors, thin films or the like. For making uniform the radial distribution of an ion beam extracted from the ion source, a plasma chamber is formed by extending a plasma producing chamber in the direction in which microwave energy is introduced. The plasma chamber thus formed is provided with second magnetic means for generating a magnetic field of multicusp geometry.