The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1988
Filed:
Jun. 09, 1986
Edward J Rice, Los Gatos, CA (US);
Acrian, Inc., San Jose, CA (US);
Abstract
An MOS transistor is fabricated which is especially suitable for use in the VHF and UHF regions, comprising a common source lateral MOSFET formed on a substrate, the substrate serving as the connection for the source to the header. The substrate, which is preferably P-type, has P-type and N-type epitaxial regions lying thereon and a sinker which forms a connection from source to substrate. The vertically isolated field effect transistor has a drain on top of a mesa on the N-type epitaxial region of the substrate, a gate in the contact region overhanging the edge of a channel formed adjacent to the mesa, and a source in the lateral edges of the groove defining the edge of the mesa. The process provides for simultaneous diffusion of the source and drain regions, followed by a metal masking step for connection of the diffused source which lies in the lateral edge of the groove to the sinker, effectively connecting the source to the substrate.