The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1988
Filed:
Dec. 24, 1986
Applicant:
Inventors:
Eberhard Spenke, Pretzfeld, DE;
Hubert Patalong, Munich, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H21L / ;
U.S. Cl.
CPC ...
357 38 ; 357 20 ; 357 30 ; 357 39 ; 357 234 ; 357 86 ;
Abstract
A thyristor has a plurality of gate-controlled MIS-FET structures which serve the purpose of controlling emitter short-circuit paths with the objective of achieving stabilization short-circuits and, if necessary, quenching short-circuits. MIS-FET structures are disclosed which are effective, yet make economical use of surface area. In accordance with the invention, this is achieved since structures are provided at a plurality of recesses of the layered n-type emitter such that the electrode contacting the n-type emitter has recesses permitting it to contact the MIS-FET structures only on a border side.