The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 1988
Filed:
Jan. 12, 1987
James D Parsons, Newbury Park, CA (US);
David E Snyder, Seattle, WA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A semiconductor device component, and process for preparation thereof, wherein current flowing in a vertical channel of semiconductor material is controlled by metallic gates laterally disposed on either side of the channel. Insulator layers are positioned overlying and underlying each gate, to reduce parasitic capacitance which would otherwise be present if the metallic gate material were in contact with overlying and underlying semiconductor material. Reduction of the capacitance allows the use of wider gate strips, thereby reducing the series resistance to an external gate contact. These changes significantly improve the high-power, high-frequency performance of the device component, as compared with permeable base transistors.