Signal scaling mesfet of a segmented dual gate design

Abstract

A novel signal scaling MESFET of a segmented dual gate design is disclosed. The MESFET, which is monolithically integrated on a semi-insulating substrate capable of localized surface modification to form active semiconductor regions using MMIC (monolithic microwave integrated circuit) techniques, has a small AC signal transfer which is adjustable in selected discrete steps. For operation in the gigahertz range, the substrate is preferably of gallium arsenide. In applying the MMIC technique, the MESFET, including segment electrodes and segment interconnections, and the electrical connections, signal paths, and passive components connected to the MESFET are formed on the substrate and defined by a photolithographic process. The technique permits reproducable feature definition and very compact minimum reactance segment interconnections, reducing deleterious parasitics and facilitating virtual unitary MESFET operation to very high frequencies. The signal scaling MESFET is an active MESFET subdivided into an n-fold plurality of selectively activated MESFET segments, each of a predetermined width, with dual gates for each segment. The AC input signal is applied to the first gates of all n segments and a DC control potential is selectively applied to the second activating gate of each of the n segments to turn current flow 'ON' or 'OFF' in selected segments. The MESFET transfer values so formed are each substantially constant in a small AC signal sense and successive values are stepped at intervals suitable for linear, trigonometric, logarithmic or arbitrary scaling functions.