The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1988
Filed:
Jun. 29, 1987
Shigeru Okamura, Machida, JP;
Tomonori Ishikawa, Fujisawa, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
High electron mobility heterojunction semiconductor devices provided with a means to cause exposure of the electron source layer thereof to an electromagnetic wave allows modulation, adjustment and the like of the characteristics thereof even after completion of the production thereof, thus realizing a considerable magnitude of flexibility in the characteristics as well as considerably different modes in various embodiments, including field effect transistors which allow modulation of threshold voltage etc., connection channels or capacitors having a smaller resistance, programmable memory devices, image sensors. In addition, the high electron mobility heterojunction semiconductor devices can have a much higher operation speed than those available in the prior art.