The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1988
Filed:
Aug. 11, 1987
Takashi Mimura, Machida, JP;
Fujitsu Limited, Kanagawa, JP;
Abstract
A semiconductor device, e.g., a complementary circuit comprising an n-channel transistor (Q.sub.n) utilizing a two-dimensional electron gas and a p-channel transistor (Q.sub.p) utilizing a two-dimensional hole gas, comprises: a semi-insulating GaAs substrate; a channel layer of an i-type GaAs having n.sup.+ -type source and drain regions and p.sup.+ -type source and drain regions; a buffer layer of an i-type AlGaAs preventing carriers from passing therethrough; first and second control layers of GaAs or AlGaAs having n-type or p-type conductivity, these layers being epitaxially formed in sequence on the substrate by an MBE method or an MOCVD method; and metal electrodes formed on the first and second control layers, n.sup.+ -type regions and p.sup.+ -type regions.