The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 1988

Filed:

Jun. 30, 1986
Applicant:
Inventors:

Paulus M van Attekum, Eindhoven, NL;

Hubertus J den Blanken, Eindhoven, NL;

Paulus A van der Plas, Eindhoven, NL;

Reinier de Werdt, Eindhoven, NL;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 34 ; 357 42 ; 357 91 ; 437 36 ; 437 56 ; 437147 ;
Abstract

A method is provided in which an implantation treatment is carried out at a high energy of implantation in a semiconductor body (1) provided with a pattern of field insulation (6a) and in which the semiconductor body is provided with a masking, comprising a comparatively thin layer (8), a second comparatively thick layer (9) of a semi-masking material and a third comparatively thin layer (10). The second layer (9) is provided with openings (12) and the first layer (8) covers at least those parts of the surface which correspond to these openings (12). The third layer (10) has openings (22) each corresponding to one of the openings (12). The material of the first layer (8) differs from that of the second layer (9) and the material of the second layer (9) differs from that of the third layer (10). Preferably, simultaneously with the second layer (9) on the front side a semiconductor layer (19) is provided on the back side (3 ) of the semiconductor body (1).


Find Patent Forward Citations

van Attekum, Paulus. (1988). Method of forming implanted regions in a semiconductor device by use of (U.S. Patent No. 4732869). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4732869

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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