The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1988
Filed:
Mar. 12, 1984
Jerry L Chruma, Scottsdale, AZ (US);
William E Gandy, Jr, Phoenix, AZ (US);
Tommie R Huffman, Tempe, AZ (US);
Syd R Wilson, Phoenix, AZ (US);
Motorola Inc., Schaumburg, IL (US);
Abstract
Zener diodes and other semiconductor junctions having very low noise characteristics and improved yield may be obtained by first ion implanting a suitable impurity into a substrate wafer, and then forming the p-n junction using a very rapid thermal activation and annealing process. For p-n junctions formed with boron (.sup.11 B) implanted into n-type silicon to a peak concentration exceeding 10.sup.20 atoms/cm.sup.3, the rapid activation process comprises heating from about room temperature to about 1150.degree. C. in 12-30 seconds, and then cooling back below 1000 degrees C. in less than 5 seconds. Noise voltages measured on devices formed using the invented process were typically much lower and more narrowly grouped than on devices of the prior art. Dynamic impedance was also slightly reduced.