The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1988
Filed:
Dec. 03, 1986
Applicant:
Inventor:
Eddie C Lee, Bloomington, MN (US);
Assignee:
Honeywell Inc., Minneapolis, MN (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437228 ; 20419223 ; 2041923 ; 20419222 ; 156653 ; 1566591 ; 156662 ; 427255 ; 430313 ; 430317 ;
Abstract
A substantially planar surface is provided over a silicon semiconductor device by depositing a silicate glass, heating the silicate glass so it reflows, bias sputtering a dielectric layer over the reflowed glass, depositing a photoresist over the dielectric layer and etching away the photoresist and enough of the dielectric to provide a substantially planar surface of the dielectric material. Quartz is the preferred dielectric material.