The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1988
Filed:
Jun. 18, 1986
Harry E Aine, Philo, CA (US);
Other;
Abstract
A batch method for fabricating semiconductive capacitive force transducers is disclosed wherein a first wafer of silicon or fused silica is recessed by etching to define a array of force transducer structures, each including a deflectable portion supported from a surrounding frame portion. The first wafer is thermoelectrically bonded between a pair of glass or quartz plates, each plate having an array of electrode structures for capacitively sensing deflection of the individual force transducers. Each electrode structure includes a lead portion passing over the frame portio of the transducers and being spaced from the frame to provide a gas communication passageway through the frame to the capacitive gap between the electrode structure and the deflectable portion of each transducer. The composite assembled wafers are notched along cleave lines generally outlining the individual transducer structures. The notching along the cleave lines is preferably performed by sawing or scribing with the saw kerf or scribe lines extending only partially through the plates so as not to contaminate the individual transducer devices. The individual transducer structures are then cleaved from the composite wafer so as not to introduce contaminants into the individual transducers.