The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 1988
Filed:
Feb. 24, 1986
Applicant:
Inventors:
Alain Roche, La Tronche, FR;
Joseph Borel, St. Egreve, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ; G03C / ; H01L / ; B44C / ;
U.S. Cl.
CPC ...
437 41 ; 430396 ; 430311 ; 1566591 ; 148D / ; 148D / ; 148D / ; 437200 ;
Abstract
A novel MOS transistor structure comprises electrodes of metallic silicide and especially tantalum silicide. In the case of the gate electrode, the silicide is directly in contact with an insulating thin-film layer. In the case of the drain and source electrodes, the silicide is directly in contact with the monocrystalline silicon. The method of fabrication is thus simplified while avoiding the use of polycrystalline silicon.