The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1988
Filed:
Aug. 01, 1986
Applicant:
Inventor:
Jonathan K Abrokwah, Rosemount, MN (US);
Assignee:
Honeywell Inc., Minneapolis, MN (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 42 ; 357 16 ;
Abstract
A low power complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which the n-channel transistor utilizes an In.sub.x Ga.sub.1-x As semiconductor gate to reduce threshold voltage (V.sub.t) of the n-channel FET to allow low power circuit operation.
Quick Actions:
Abrokwah, Jonathan. (1988). Low power algaas/gaas complementary fets incorporating ingaas n-channel (U.S. Patent No. 4729000). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4729000
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile