The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1988
Filed:
Aug. 12, 1986
Applicant:
Inventors:
Nicolas Szydlo, Ris Orangis, FR;
Francois Boulitrop, Sceaux, FR;
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01J / ; B44C / ;
U.S. Cl.
CPC ...
357-2 ; 136258 ; 156652 ; 156653 ; 156656 ; 156657 ; 1566591 ; 156662 ; 2502 / ; 250578 ; 357 30 ; 357 58 ; 437-3 ; 437 61 ; 437228 ;
Abstract
A method of fabricating a light image detector is provided in which there are deposited on a substrate a layer of a conducting material then successively p.sup.+ doped, undoped, n.sup.+ doped, undoped, then p.sup.+ doped semiconductor layers. Then at least one column of material is etched in these layers. The in the column thus obtained, individual detectors are formed solely in the semiconductor layers. The sides of the individual detectors are then irradiated. Finally, line electrodes are deposited in contact with the upper parts of the detectors not covered with an isolating layer.