The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1988
Filed:
Sep. 19, 1985
Hirofumi Namizaki, Hyogo, JP;
Yasushi Sakakibara, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of fabricating a semiconductor laser stably operable at high temperatures over long periods of time and with a low leakage current. A semiconductor wafer is prepared including a semiconductor substrate of a first conductivity type and a current blocking layer formed thereon, the current blocking layer including at least one semiconductor layer of a second conductivity type. A groove is formed in the upper surface of the wafer having a depth corresponding to at least the thickness of the current blocking layer. At least surface regions of the wafer are removed in the vicinity of the groove and upper sidewall surface regions of the groove using a semiconductor solution. A plurality of semiconductor crystal layers are then grown on the wafer, including a layer consistuting an active region in the groove, by liquid phase epitaxy.