The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1988
Filed:
Feb. 25, 1986
Applicant:
Inventor:
Tadashi Hirao, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 33 ; 437 46 ; 437 69 ; 437151 ; 437162 ; 437985 ; 357 34 ; 357 50 ; 357 / ;
Abstract
A method for manufacturing semiconductor device with improved frequency characteristics is provided. The base resistance and the base-to-collector capacitance are reduced by minimizing a base area and a space between an emitter and the base. The minimization of the base area is brought about by forming the emitter region in the base region by self-aligned process. The minimization of the space between the emitter and the base is accomplished by presenting only an insulator layer between a silicon layer on the emitter region and a metal wiring on the base region.