Field effect transistor of the mesfet type for high frequency

Abstract

A field effect transistor for high-frequency applications includes, on a monocrystalline semi-insulating substrate, a thin active n-doped layer of a material having a high electron mobility, on whose surface are deposited two ohmic contacts forming the source and drawing contact regions of the transistor, between which a metallic contact constitutes a gate electrode of the Schottky type. According to the invention, the transistor is characterized in that a dielectric layer is deposited on the active layer between the source and gate electrodes on the one hand and between the gate and drain electrodes on the other hand, and in that the metallic layer constituting the ohmic contacts is continuously prolonged on this dielectric layer without causing a short-circuit with the gate.