The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1988
Filed:
Aug. 18, 1986
Applicant:
Inventors:
Assignee:
Canadian Patents & Development Limited, Ottawa, CA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
338 15 ;
Abstract
Photoconductors with channels that lie in the surface depleted region of a GaAs structure are described. These devices have nanoampere bias current, and exhibit photoconductive gain. In contrast to other photoconductors, their low frequency responsivity is of the same order as that in the GHz region, alleviating problems of equalization necessary in receiver applications. As well, these devices exhibit over 60 dB isolation as optoelectronic switches.
MacDonald, Robert. (1988). Depleted channel photoconductor (U.S. Patent No. 4727349). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4727349
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile