The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1988
Filed:
Jul. 10, 1986
Applicant:
Inventors:
Hugh M Hyatt, Pacific Grove, CA (US);
Karen P Shrier, Half Moon Bay, CA (US);
Assignee:
EOS Technologies Inc., New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B / ; H01B / ; H01C / ; H01C / ;
U.S. Cl.
CPC ...
428329 ; 428329 ; 428331 ; 428403 ; 428404 ; 174127 ; 252504 ; 252506 ; 252507 ; 252511 ; 252512 ; 252513 ; 252514 ; 252516 ; 252518 ; 252519 ; 252520 ; 338 21 ; 361 91 ; 361127 ; 427215 ; 427216 ; 427217 ;
Abstract
A material provides protection against electrical overstress transients having rise times as rapid as a few nanoseconds or less. The material comprises a matrix formed of a mixture of separate particles of conductive materials and separate particles of semiconductor materials coated with insulating material to provide chains of the particles within the matrix with interparticle separation distances along the chains less than several hundred angstroms, thereby to permit quantum-mechanical tunneling of electrons between the separate particles in response to high energy electrical transients.