The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1988
Filed:
Jun. 09, 1986
Applicant:
Inventors:
Tung Pham Ngu, Paris, FR;
Jean Chevrier, Gif sur Yvette, FR;
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
437180 ; 437245 ; 427259 ;
Abstract
A method is provided for forming metallizations on a semiconductor component, which are closer together than is possible with the present day masking technology. In accordance with the invention, a pattern of minimum dimensions is defined in a mask by means of two openings. This pattern is underetched, either by light over-exposure, or by particle back-scattering. Two metallizations are deposited, directionally in the bottom of the openings then a dielectric layer is deposited, non directionally, on the metallizations, the mask is removed by dissolution.