The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1988
Filed:
Mar. 27, 1986
Badih El-Kareh, South Hero, VT (US);
Richard R Garnache, Shelburne, VT (US);
Ashwin K Ghatalia, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method or process is provided for making a semiconductor structure which includes the steps of forming in a semiconductor body a P/N junction and an opening in an insulating layer disposed on the surface of the semiconductor body. A trench is then formed in the semiconductor layer having a sidewall located along a given plane through the opening and through the P/N junction. An insulating material is disposed within the trench and over the insulating layer and a block or segment of material is located over the trench so as to extend a given distance from the trench over the upper surface of the body. The insulating material and the block are then etched so as to remove the block and the insulating material located along the sides of the block. A layer of low viscosity material is formed over the semiconductor body so as to cover the remaining portion of the insulating material, the layer of low viscosity material and the insulating material having similar etch rates. The layer of low viscosity material and the insulating material are then simultaneously etched directionally until all of the layer of low viscosity material is removed. Metallic contacts may now be formed on the surface of the semiconductor body without the concern that the metallic material will seep or enter into the trench causing a short at the P/N junction.