The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1988
Filed:
Oct. 23, 1986
Lewis M Fraas, El Sobrante, CA (US);
Chevron Research Company, San Francisco, CA (US);
Abstract
A photovolatic device is disclosed comprising a p-type conductive substrate, a sandwich of p-type Al.sub.y Ga.sub.(1-y) As bottom layer/p-type GaAs base layer/p-type Al.sub.y Ga.sub.(1-y) As top layer (wherein the surface area of the p-type Al.sub.y Ga.sub.(1-y) As top layer is less than the surface area of the p-type GaAs base layer, a layer of n.sup.+ -type GaAs emitter contacting the surface of the p-type GaAs base layer (wherein the surface area of the layer of n.sup.+ -type GaAs emitter is less than one-tenth the surface area of the p-type GaAs base layer), an insulating layer contacting the surface of the p-type Al.sub.y Ga.sub.(1-y) As top layer, and means for forming electrical contacts to the substrate and the incident surface of the n.sup.+ -type GaAsemitter layer.