The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1988
Filed:
Feb. 27, 1987
Yoshihiro Kokubo, Hyogo, JP;
Wataru Susaki, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser device is fabricated by forming a first semiconductor layer of N type GaAs to be a current narrowing layer on a P type GaAs semiconductor substrate, forming a second semiconductor layer of P type AlGaAs on the first semiconductor layer, removing said second semiconductor layer by etching except the proximity of the portion to be the end surface of a resonator, forming a striped groove which is deep enough to penetrate the first semiconductor layer and extends to that direction which crosses the surface to be the end surface of the resonator and, depositing a lower clad layer, an active layer, an upper layer and a contact layer in this order.