The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1988
Filed:
Dec. 29, 1986
Applicant:
Inventor:
Horst Leuschner, Phoenix, AZ (US);
Assignee:
SGS Semiconductor Corporation, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 2313 ; 357 41 ; 357 51 ; 357 59 ; 357 65 ; 357 68 ; 357 71 ;
Abstract
An improved input network for MOS semiconductor devices intended to increase the device resistance to electrostatic discharge in the input circuit. A series of features comprising round and concentric round contacts and buried contacts, a layer of polycrystalline silicon disposed between the metal input contact and the N+ diffusion layer and enlarged metal contact areas are employed to reduce the tendency toward breakdown by reducing hot spots in the device.