The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1988
Filed:
Jul. 07, 1986
Pieter J Jochems, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a semiconductor device having an integrated circuit in an epitaxial layer on a substrate in which the epitaxial layer comprises islands of conductivity type opposite to that of the substrate which are surrounded laterally by a surrounding region of the same conductivity type as the substrate, is disclosed. Both the islands and the surrounding region are formed by diffusion from buried layers through the epitaxial layer. A bipolar transistor is provided in at least one island. The p-n junctions between the islands and the surrounding region are substantially at right angles to the surface. The invention involves a method of manufacturing the device and is of particular importance for realizing very compact and fast circuits with low dissipation consisting of a combination of CMOS bipolar subcircuits.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile