The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1988
Filed:
Oct. 24, 1985
Yasushi Sakakibara, Hyogo, JP;
Hirofumi Namizaki, Hyogo, JP;
Etsuji Oomura, Hyogo, JP;
Hideyo Higuchi, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser device in which the thickness and position of an active layer grown in a groove are made more controllable. The inventive device includes a buffer layer of a first conductivity type formed on a semiconductor substrate of the same conductivity type, a first current blocking layer of a second conductivity type formed over the first buffer layer, the aforementioned groove being formed through the first and current blocking layer to the buffer layer, the active layer buried in the groove, and mesas formed on both side of the groove. With this structure, during crystal growth of the active layer, atoms which would otherwise diffuse into the groove and make it difficult to control the thickness and position of the active layer diffuse into portions outside the mesas and grow thereon.