The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 1988

Filed:

Oct. 02, 1985
Applicant:
Inventors:

Etsuya Takeda, Osaka, JP;

Eiichiro Tanaka, Osaka, JP;

Shinji Fujiwara, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03G / ;
U.S. Cl.
CPC ...
430 84 ; 430 95 ; 430 65 ; 430128 ;
Abstract

A photoconductor which comprises, on a conductive substrate, a photoconductive layer of amorphous silicon hydride to which a first impurity consisting essentially of an element of Group Va or Group VIa of the Periodic Table is added. The contents of the first impurity and hydrogen in the amorphous silicon hydride layer vary in section from one side toward the other side of said layer.


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