The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 1988
Filed:
Jul. 01, 1985
Dimitrios Pavlidis, Paris, FR;
Erhard Kohn, Orsay, FR;
Ernesto Perea, Paris, FR;
John Magarshack, Rueil Malmaison, FR;
Thomson-CSF, Paris, FR;
Abstract
The invention relates to a variable capacitance element operating in the ultra-high frequency range. In order to integrate this element on to an integrated circuit chip, the element is designed so that the control voltage does not interfere with the ultra-high frequency signal and has neither filters nor shock chokes which are not integrable. The element according to the invention utilizes the junction capacitances variation of at least one diode, reverse-biased by a voltage across a resistor, the high frequency signal being at the diode anode. The element construction comprises an active zone in a semiinsulating substrate. Two metallizations partly cover the active zone and form therewith at least one diode. A projection to the active zone forms the resistor, to which is applied the control voltage. The diodes are p-n junctions of schottky diodes. The semiconductor material is Si or from the III-V group. Application to oscillators, filters, phase shifters, etc. in ultra-high frequency equipment.