The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 1988
Filed:
Feb. 06, 1986
Chihiro Okado, Fuchu, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A driving circuit for an insulated gate bipolar transistor (IGBT) which has a power source, a gate voltage input circuit which supplies the voltage to a gate terminal of IGBT, a detecting circuit for detecting a collector to emitter voltage of the IGBT and an adjusting circuit for lowering the control signal. When an abnormality is detected by the detecting circuit, the adjusting circuit performs a dropping operation of the gate voltage of the IGBT immediately after the detection or after the passage of a predetermined time following the application of the ON signal to the gate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile