Apparatus for transient annealing of semiconductor samples in a

Abstract

An improved apparatus for annealing an ion-implanted semiconductor sample duces the deleterious side effects otherwise associated with the process. A semiconductor sample, fabricated, for example, from indium phosphide or gallium arsenide, is set upon the fingers of a carrier which is displaced to the interior of an elongate furnace having its internal temperature maintained at the proper annealing temperature. Next, the fingers are rotated and the sample is placed on a number of razor blade-like edges extending up from an internal rack. The carrier is withdrawn and the sample is quickly brought to the annealing temperature for the precise period of time usually no more than 20 seconds. After the exact annealing period, the carrier is reintroduced and the fingers are rotated to lift the sample from the rack and the sample is withdrawn. Since only the sample is brought within the furnace and is placed on the preheated rack, it is immediately brought to the proper annealing temperature for the precise annealing duration that is ended by the immediate withdrawal of the sample from the furnace on the moveable carrier. Since the furnace, carrier and rack are in sealed enclosure, a non-oxidizing gas is provided to prevent oxidation and related degradation of the materials of the sample.